None 没有
SPEAKER 1: Well, when V GS greater than VT, Im going to 演讲者1：当VGS≥VT时，
get a short circuit between the drain 漏极和源终端之间
and the source terminals. 会出现短路。
And when I have a short circuit, then V DS is always 出现短路时，VDS
going to be 0. 始终为0。
And the current i DS is going to be determined by the 电流iDS则由连接至金属氧化物半导体场效电晶体的外电路
external circuit that is connected to the MOSFET. 确定。
So other circuit parameters will determine the current, 因此，其他电路参数将确定电流，
but the DNS terminals can take any current. 不过DNS终端可以接通任何电流。
Its a short circuit. 出现短路。
But V DS is always going to be 0, and it 不过VDS始终为0，
can take any current. 而且它可以接通任何电流。
So lets do a very quick demo and take a very quick look at 我们可以快速演示一下，并根据理解力观察一下
what this looks like in real life using a scope. 这在现实生活中像什么。
And again, remember, this is a very 请再次记住，这是一个非常简单的
simple view of the MOSFET. 金属氧化物半导体场效电晶体视图。
Im making a lot of simplified assumptions in treating it 操作像这样一个开关时，我可以作出许多。
like a switch. 简易的假设。
And I just want to caution you again that the actual MOSFET 我想再次提醒你们，实际金属氧化物半导体场效电晶体的特性
behavior is quite a bit more complex. 相当复杂。
And the switch calculation is a gross simplification. 而且，开关的计算方法将问题过于简单化了。
If were able to deal with the simple abstraction of a 如果能处理简单抽象的金属氧化物半导体场效电晶体，
MOSFET, then continue. 那么就可以继续。
But if you really, really, really want to check out what 但是如果你的确很想检验金属氧化物半导体场效电晶体
the details of a MOSFET look like and what it really, 外观的细节情况，以及真实的运作情况，
really behaves like, then I would recommend that you go 那么我建议你去翻阅一下教材的
check out section 7.3 of the textbook. 第7.3节内容。
OK, so lets go to the demo and show you how the MOSFET 好的，我们进行演示，在VGS值处于短路且VGS的不同值处于开路时，
really behaved like a switch where it is short circuited 我将向你们展示金属氧化物半导体场效电晶体如何像
for one value of V GS and open circuited for a different 开关一样
value of V GS. 运作。
None 没有了。